Industry
Samsung breaks ground for second memory fab line in Xian
March 28, 2018
Samsung Electronics announced Wednesday the company had broken ground for a second memory chip fabrication line in Xian, Shaanxi Province of China, investing a total of $7 billion for the next two years. The second line, slated for completion next year, will be used for manufacturing Samsung’s premium V-NAND flash memory chips, a strategic move in response to growing demand for NAND chips, especially in the Chinese IT market, the company said. “By producing the world’s best memory products here