Samsung Electronics Co. said Thursday it has finalized the development of second generation 10-nanometer FinFET process technology, claiming the development will help the firm secure more foundry business partners.
While the South Korean chipmaker developed the industry's first-generation 10-nanometer FinFET technology, the company said the latest development has improved performance and power efficiency by 10 percent and 15 percent, respectively.
(Yonhap)
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