30nm 4Gb Double Data Rate 4 DRAM module
Samsung Electronics, the world’s biggest memory chip manufacturer, has developed the industry’s first 30 nanometer-class Double Data Rate 4 DRAM module.
The memory chip module, used for enterprise servers and controller solutions, can transfer data at a rate of nearly 3.2 gigabits per second, the company said.
The new DDR4 module can not only process data faster, but is also 40 percent more energy-efficient compared with its previously developed DDR3 DRAM module with speeds of 1.6 gigabits per second.
“With the latest DDR4, the company will boost partnerships with the server and central processing unit industries to actively develop next-generation green IT systems,” said Hong Wan-hoon, executive vice president of Samsung Electronics.
The executive added that it will pioneer the premium memory market by strengthening its green memory business.
The company is expected to go full throttle in expanding in the market in 2013.
The new DDR4 DRAM marks the third for Samsung Electronics to feature on efficient module following the 2GB DDR4 with 30nm-class processing technology in December 2010. Last month, the tech giant made high-end 16GB and 8GB DDR4 registered dual inline memory modules for CPU and controller makers.
Samsung Electronics plans to seek standardization of the new chip module with the Joint Electron Devices Engineering Council sometime in August this year, and kick off mass production of 32GB registered dual inline memory modules soon.
The company had indicated that it is in the process of developing high-efficiency DRAM green memory chips for the global markets in line with efforts to revive its chip business, which had a lackluster performance in the first quarter of this year due to seasonal factors.
Its chip unit’s operating profit dropped 54 percent to 760 billion won in the first quarter, according to financial statements.
By Park Hyong-ki (
hkp@heraldcorp.com)